SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DRV8162DGSR is a smart half-bridge gate driver manufactured by Texas Instruments, designed for driving high-side and low-side N-channel MOSFETs in motor control applications. It operates with a supply voltage range of 8 V to 20 V and supports a maximum voltage of 105 V. The device features an integrated bootstrap diode and a trickle charge pump enabling 100% PWM duty cycle operation. It provides sixteen levels of adjustable peak gate drive current, ranging from 16 mA to 1 A source and 32 mA to 2 A sink, with configurable ratios. The driver includes a low-offset current sense amplifier, independent shutdown pin, and multiple protection features such as overcurrent, undervoltage lockout, and thermal shutdown.
Verify the specific suffix DGSR corresponds to the VSSOP-20 package and Reel tape-and-reel packaging configuration. Confirm compatibility with the DRV8161EVM development kit if hardware validation is required. Ensure the design accounts for the 8 V to 20 V operating voltage range and the 105 V absolute maximum rating for robust system integration.
Select this component when designing half-bridge drivers requiring integrated current sensing and high-voltage tolerance up to 105 V. It is suitable for applications needing precise gate drive control with sixteen adjustable current levels and flexible PWM interfaces. Consider the VSSOP-20 package constraints and the requirement for external N-channel MOSFETs compatible with the specified gate drive capabilities.
The DRV8162DGSR belongs to the DRV816x family of smart half-bridge gate drivers from Texas Instruments. This series is engineered for high-performance motor control, offering integrated protection and current sensing to simplify system design. The family supports various N-channel MOSFET configurations and includes features like fault status indication and soft-shutdown sequences for enhanced reliability in dynamic motor environments.
The DRV8161DGSR is a parameter-equivalent alternative within the same family, featuring similar half-bridge capabilities but potentially differing in specific current sense amplifier gain or interface configurations. Verify functional equivalence regarding gate drive current levels and protection thresholds before substitution.