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The DS1086LU-455/T+W is a 3.3V programmable clock generator featuring spread-spectrum output capabilities. It generates square-wave frequencies ranging from 130kHz to 66.6MHz with selectable dither levels of 0.5%, 1%, 2%, 4%, or 8% to reduce radiated emissions. The device operates on a 2.7V to 3.6V supply and includes non-volatile EEPROM for standalone configuration storage. Key electrical parameters include a master oscillator frequency of 33.3MHz to 66.6MHz, a default factory frequency of 48.65MHz, and an active supply current of 10mA typical at 15pF load.
Verify the specific ordering suffix 'T+W' against manufacturer documentation to confirm tape-and-reel packaging and lead-free/RoHS compliance status. Ensure the component meets industrial temperature range requirements (-40°C to +85°C) for the intended environment. Confirm that the 8-pin μSOP package dimensions align with the target PCB footprint specifications.
Select this component when a single-supply 3.3V clock source with integrated spread-spectrum modulation is required. The device eliminates external timing components, simplifying design. Consider the 2-wire serial interface for dynamic frequency adjustment if in-circuit programming is necessary. Verify that the required output frequency falls within the valid DAC and offset register ranges defined in the datasheet.
This part belongs to the Maxim Integrated DS1086L EconOscillator family. The 'U' designation indicates the industrial temperature range (-40°C to +85°C). The '+W' suffix typically denotes a lead-free and RoHS-compliant package variant. The base model provides the core functionality of a programmable, spread-spectrum clock generator with non-volatile memory storage.
Direct pin-compatible replacements within the same family include the DS1086LU+ for lead-free versions. Verify that any substitute maintains the 2.7V to 3.6V supply voltage range and supports the required 2-wire serial interface protocol. Ensure the replacement device offers comparable spread-spectrum dithering capabilities and non-volatile memory retention.