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The DS1210S+ is a nonvolatile controller chip designed to convert standard CMOS RAM into nonvolatile memory. It operates within a supply voltage range of 4.75V to 5.5V and consumes less than 100nA of battery current. The device features an automatic power-fail detection mechanism that inhibits write operations when VCC is out of tolerance, ensuring data integrity. It supports redundant battery configurations via two battery inputs and includes a battery status warning function that triggers if the backup voltage drops below 2.0V. The component is housed in a 16-pin SO package.
Verify the specific package variant required, as the DS1210S+ denotes the commercial temperature range (0°C to +70°C) in a 16-pin SO package. Industrial variants exist with different suffixes. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure compatibility with existing CMOS RAM interfaces regarding voltage levels and timing requirements.
Select this controller when converting standard SRAM to nonvolatile storage is necessary. It is suitable for designs requiring automatic battery switchover and write protection without complex external logic. Consider the industrial temperature range option if operation below 0°C is required. Verify that the system can accommodate the necessary battery connections and that the supply voltage remains within the specified operating limits.
The DS1210 series belongs to Analog Devices' Maxim Integrated line of nonvolatile memory controllers. These components are engineered to simplify the implementation of battery-backed RAM solutions in embedded systems. The S+ designation indicates a lead-free/RoHS-compliant version packaged in a 16-pin Small Outline format, distinguishing it from PDIP or industrial temperature grade alternatives.
Public confirmed substitute part numbers: DS1210SN+