DS1248Y-100IND

Overview

The DS1248Y-100IND is a nonvolatile SRAM integrated with a phantom clock real-time clock (RTC). It provides 128K x 8 bits of memory and tracks time including hundredths of seconds, minutes, hours, days, dates, months, and years. The device features an embedded lithium energy cell that maintains calendar operation and retains RAM data when VCC is absent. It includes automatic leap year compensation valid up to the year 2100 and ensures over 10 years of data retention in power-off conditions. The component utilizes a parallel interface and operates within a supply voltage range of 4.5V to 5.5V.

Feature Summary

• Integrates 128K x 8 NV SRAM with a phantom clock RTC for simultaneous data storage and timekeeping
• Embedded lithium energy source automatically switches on during power failure to maintain data and clock
• Automatic leap year compensation valid through the year 2100
• Over 10 years of data retention capability without external power

Applications

• Industrial control systems requiring persistent time and data logging
• Data acquisition systems needing nonvolatile memory backup
• Telecommunications equipment requiring accurate time stamping

Procurement Notes

Verify the specific suffix IND indicates the industrial temperature grade (-40°C to +85°C) as defined in the manufacturer's ordering information. Confirm package type matches the required 32-pin EDIP module format. Check RoHS compliance status if lead-free components are mandated by project specifications.

Selection Notes

Select this component when a combined solution for high-density static RAM and precise timekeeping is required without external battery management circuits. Ensure the system design accommodates the 32-pin DIP module footprint and supports the parallel interface timing requirements. Verify that the operating environment falls within the specified -40°C to +85°C temperature range.

Part Context

This part belongs to the DS1248 series of 1024K NV SRAMs with phantom clocks. It is designed to directly replace volatile static RAM or EEPROM in applications where data loss upon power interruption must be prevented. The device integrates the crystal and lithium battery into a single encapsulated module, simplifying board layout compared to discrete solutions.

Replacement Considerations

The datasheet notes pin-for-pin compatibility with the DS1244P and DS1251P. Verify that these alternative parts meet the specific electrical and timing requirements of the target application before substitution.