DS1284QN/T&R

Overview

The DS1284QN/T&R is a parallel interface real-time clock and calendar IC manufactured by Analog Devices Inc./Maxim Integrated. It provides timekeeping in HH:MM:SS format with 12/24-hour selection and date tracking including leap year correction. The device integrates 50 bytes of static RAM and includes features such as an alarm, square wave output, and a watchdog timer. It operates on a 4.5V to 5.5V supply with a maximum current consumption of 7mA at 5V during timekeeping. The component is housed in a 28-PLCC package and supports surface mount installation.

Feature Summary

• Integrated 50-byte battery-backed static RAM for data storage
• Hardware alarm function with programmable square wave output
• Automatic date adjustment for month length and leap years
• Watchdog timer functionality for system monitoring

Applications

• Industrial control systems requiring precise timekeeping
• Data logging equipment needing non-volatile memory backup
• Embedded systems utilizing parallel bus interfaces

Procurement Notes

Verify the specific suffix 'T&R' indicates Tape & Reel packaging when sourcing. Confirm the operating temperature range of -40°C to 85°C matches the application environment. Ensure the parallel interface compatibility with the host microcontroller before procurement.

Selection Notes

Select this model for applications requiring a parallel interface RTC with integrated SRAM. Compare against the DS12885 series if larger memory capacity (114 bytes) or different voltage ranges are required. Verify that the 28-PLCC package footprint fits the PCB layout constraints.

Part Context

This part belongs to the DS1284 family of real-time clocks. It serves as a direct replacement for older discrete RTC solutions in legacy designs. The 'QN' designation typically refers to the plastic leaded chip carrier package variant within this product line.

Replacement Considerations

The DS1284Q is the equivalent tube-packaged version of this component. Designers may also consider the DS12885 series for increased SRAM capacity, though pinouts and register maps may differ.