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The DS1314E+ is a nonvolatile SRAM controller in a 20-pin TSSOP package. It operates within a supply voltage range of 2.7V to 3.6V and supports an industrial temperature range from -40°C to +85°C. The device converts CMOS SRAM into nonvolatile memory by automatically switching to a lithium battery backup during power failures. It features unconditionally write-protects the SRAM when VCC is out of tolerance, monitors lithium cell voltage for advanced warning of impending failure, and provides a Battery Warning output signal.
Verify the specific package type (TSSOP) and RoHS compliance status (+ suffix) against the manufacturer's current ordering information. Confirm that the operating voltage requirements align with the target system design. Check for any recent product change notices or end-of-life announcements from Analog Devices/Maxim Integrated before finalizing procurement plans.
Select this component when a reliable nonvolatile memory solution is required for CMOS SRAM applications. Ensure the system design accommodates the 20-pin TSSOP footprint and meets the specified industrial temperature range. Consider the battery monitoring capabilities if long-term data retention without frequent power cycles is critical.
The DS1314 series includes various packages such as 8-pin DIP, 8-pin SOIC, 16-pin SOIC, and 20-pin TSSOP. The DS1314E+ specifically refers to the 20-pin TSSOP variant. This family of devices is designed to provide robust power management and data protection for nonvolatile memory applications in industrial environments.
DS1314S+
It unconditionally write-protects the SRAM by inhibiting the chip enable output when VCC is detected to be out of tolerance.
The BW pin is an active-low open-drain output that signals an impending battery failure when the monitored lithium cell voltage falls below a factory-programmed trip point.