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DS28E80Q+U is listed in the Memory IC range at ChipApex. The manufacturer field lists Analog Devices Inc./Maxim Integrated. Its product description is IC EEPROM 2KBIT 1-WIRE 6TDFN. Review the specifications below when checking this part for your BOM.
The DS28E80Q+U is a gamma radiation-resistant, user-programmable nonvolatile memory chip featuring 248 bytes of storage organized into 31 blocks of 8 bytes. It communicates via the single-contact 1-Wire bus at standard (15.3kbps) or overdrive (76kbps) speeds. Each device contains a factory-programmed unique 64-bit registration number for node addressing. The operating voltage range is 2.97V to 3.63V, with an operating temperature range of -40°C to +85°C.
Verify the specific suffix 'Q' indicates qualified reliability standards and '+U' denotes the TDFN-EP package configuration. Confirm the component meets required radiation tolerance levels for intended sterilization processes. Ensure system pullup resistor values comply with the specified maximum resistance limits for reliable 1-Wire communication.
Select this component when radiation hardness is critical for applications involving repeated sterilization cycles. The 248-byte capacity and block-level protection suit small data storage needs. Verify compatibility with existing 1-Wire master controllers supporting standard and overdrive speeds. Consider the 6-pin TDFN package constraints for board layout and thermal management.
The DS28E80 belongs to the Maxim Integrated 1-Wire memory family, designed specifically for harsh environments. It utilizes a specialized storage cell technology distinct from floating-gate EEPROMs to withstand high-energy radiation. This series addresses the need for durable, programmable identification in medical and industrial sectors where standard memory would fail.
DS28E80Q+T
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