DSS4160DS-7

Overview

The DSS4160DS-7 is a dual NPN low saturation transistor manufactured by Diodes Incorporated in an SOT26 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 60V and a continuous collector current rating of 1A, with a peak pulse current capability of 2A. The device exhibits a low equivalent on-resistance (RCE(sat)) of 100mΩ and a maximum collector-emitter saturation voltage (VCE(sat)) of 250mV at 1A. Electrical characteristics include a transition frequency (fT) ranging from 150MHz to 220MHz and a DC current gain (hFE) between 100 and 380 at 1A. Thermal performance specifies a power dissipation of 0.7W and a junction-to-ambient thermal resistance of 179°C/W under standard conditions.

Feature Summary

• Dual NPN configuration housed in a compact SOT26 package for space-constrained designs
• Low saturation voltage and high efficiency due to reduced heat generation
• High reliability qualification compliant with JEDEC standards

Applications

• Power management functions
• DC-to-DC conversion circuits
• MOSFET gate driving applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the reel packaging quantity of 3,000 units as documented in the manufacturer's ordering information. Confirm that the required automotive grade specifications are met by selecting the appropriate Q-suffix variant if AEC-Q100/101/104/200 qualification is necessary for the target application.

Selection Notes

Select this component when a dual NPN topology is required within a single SOT26 footprint. Ensure the design accommodates the 0.7W power dissipation limit and verify that the 60V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Consider the 1A continuous current limit and the 2A peak pulse capability for transient load analysis.

Part Context

This part belongs to the DSS4160 series of low saturation transistors designed for high-efficiency switching applications. It serves as a dual-transistor alternative to discrete single NPN components, reducing board space and assembly complexity. The SOT26 package provides six terminals to accommodate two independent NPN structures sharing common connections.

Replacement Considerations

Direct pin-compatible replacements may include other dual NPN transistors in the SOT26 package with matching 60V ratings and similar saturation characteristics. Verify electrical parameters such as hFE and VCE(sat) against the original datasheet requirements before substitution.