DSS45160FDB-7

Overview

The DSS45160FDB-7 is a complementary NPN/PNP low saturation voltage transistor in a U-DFN2020-6 package. It features a maximum collector-emitter voltage of 60V and continuous collector currents of 1A (NPN) and -1A (PNP). The device offers low saturation voltages, typically 185mV for the NPN at 1A/50mA base current and -340mV for the PNP at -1A/-100mA base current. Power dissipation reaches up to 2.47W with optimized thermal resistance. Transition frequencies are 175MHz for the NPN and 65MHz for the PNP.

Feature Summary

• Complementary NPN and PNP transistors integrated into a single low-profile package
• Optimized thermal performance with junction-to-ambient resistance significantly lower than SOT26 equivalents
• Low saturation voltage characteristics suitable for efficient power switching applications
• Lead-free construction compliant with RoHS directives and free from halogens and antimony

Applications

• Gate driving circuits
• Load switches
• Power management systems
• Charging circuits
• Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component marking '2C' matches the intended product type identification for quality assurance purposes during incoming inspection.

Selection Notes

Select this component when space constraints require a low-profile U-DFN2020-6 package while maintaining high current handling capabilities. Ensure the application demands low saturation voltages to minimize conduction losses. Verify that the required operating temperature range falls within the specified -55°C to +150°C limits for both storage and active operation.

Part Context

This part belongs to Diodes Incorporated's portfolio of complementary bipolar junction transistors designed for surface mount technology. It serves as a compact solution for replacing discrete dual transistor arrangements in space-sensitive designs. The U-DFN2020-6 form factor provides a balance between thermal dissipation and physical footprint compared to traditional leaded packages.

Replacement Considerations

Datasheets indicate thermal resistance is 40% lower than SOT26 configurations. Designers should verify pinout compatibility if substituting from other dual BJT packages. Ensure the replacement component supports the required 60V breakdown voltage and 1A continuous current ratings for equivalent circuit performance.

FAQ

What is the typical transition frequency for the NPN transistor section?

The typical transition frequency (fT) for the NPN transistor is 175 MHz, measured at VCE = 10V, IC = 50mA, and f = 100MHz.

How does the power dissipation capability change based on PCB layout?

Power dissipation varies from 405 mW on a minimum recommended pad layout on single-sided FR4 to 2.47 W when mounted on a 28mm x 28mm 2oz copper heat sink area.

What is the maximum collector-emitter saturation voltage for the PNP transistor?

The maximum collector-emitter saturation voltage (VCE(sat)) for the PNP transistor is -550 mV when the collector current is -1A and the base current is -50 mA.