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The DSS5160FDB-7 is a dual PNP low VCE(sat) transistor in a U-DFN2020-6 package. It features a collector-emitter breakdown voltage (BVCEO) of -60V and a continuous collector current (IC) of -1A. The equivalent on-resistance (RCE(sat)) is 360mΩ at IE = -0.5A, IB = -50mA. Saturation voltage (VCE(sat)) reaches -340mV at IC = -1A, IB = -100mA. Power dissipation (PD) is up to 2470mW with an exposed pad on a large copper area. Thermal resistance (RθJA) is 51°C/W under the same conditions. Operating temperature range is -55°C to +150°C.
Verify the ordering suffix '-7' corresponds to the standard reel quantity of 3,000 units per datasheet specifications. Confirm the component marking '2A' matches the intended product type during incoming inspection. Ensure the U-DFN2020-6 footprint aligns with the manufacturer's suggested pad layout to maintain thermal performance ratings.
Select this component when a dual PNP transistor with a -60V rating and -1A continuous current capability is required. The U-DFN2020-6 package offers a low profile of 0.6mm, suitable for space-constrained designs. Evaluate the thermal resistance requirements against the PCB copper area available for the exposed collector pads to ensure adequate heat dissipation.
The DSS5160FDB-7 belongs to Diodes Incorporated's line of dual PNP transistors designed for low saturation voltage applications. It utilizes a U-DFN2020-6 case material made from molded plastic with a UL flammability rating of 94V-0. The terminals feature a NiPdAu finish, ensuring solderability per MIL-STD-202 Method 208.
Public confirmed substitute part numbers are not provided in the source document.