DST847BDJ-7

Overview

The DST847BDJ-7 is a dual NPN small-signal transistor manufactured by Diodes Incorporated, housed in an SOT963 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 45V and a maximum continuous collector current (IC) of 100mA per transistor. The device dissipates up to 300mW of power with a thermal resistance (RθJA) of 417°C/W under steady-state conditions. Electrical characteristics include a DC current gain (hFE) ranging from 200 to 470 at IC=2.0mA, VCE=5V, and a transition frequency (fT) of 100MHz at IC=10mA. The operating junction temperature range spans from -55°C to +150°C.

Feature Summary

• Dual NPN configuration within a compact 1mm² footprint that reduces board space significantly compared to standard SOT23 packages.
• High collector current capability of 100mA combined with a 45V breakdown voltage for general-purpose switching applications.
• Totally lead-free and fully RoHS compliant construction, ensuring halogen and antimony-free operation.

Applications

• General-purpose signal amplification and switching circuits
• Low-voltage logic interface applications
• Portable electronic devices requiring minimal off-board profile

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 10,000-unit reel packing quantity as defined in the manufacturer's documentation. Confirm compliance with RoHS 3 and REACH directives if required by local regulations. Ensure the procurement channel is authorized to guarantee product authenticity and adherence to standard terms of sale.

Selection Notes

Select this component when a dual NPN topology is required in a space-constrained design utilizing the SOT963 package. Consider the 417°C/W thermal resistance for heat dissipation calculations on single-sided FR4 PCBs. Verify that the 100mA collector current rating meets the load requirements and that the 45V breakdown voltage provides sufficient margin for the application voltage.

Part Context

This part belongs to the DST847 series of dual small-signal transistors produced by Diodes Incorporated. It serves as the NPN counterpart to the complementary PNP type, identified as DST857BDJ. Both devices share similar electrical characteristics and are designed for high-density surface-mount assembly in consumer and industrial electronics.

Replacement Considerations

The complementary PNP equivalent is the DST857BDJ. For pin-compatible replacements in the SOT963 package, verify that alternative dual NPN transistors meet the 45V BVCEO, 100mA IC, and 300mW PD specifications. Check thermal resistance and hFE ranges to ensure circuit performance parity.

FAQ

What is the maximum power dissipation for the DST847BDJ?

The maximum power dissipation is 300mW at an ambient temperature of +25°C, measured on a minimum recommended pad layout of 1oz copper on a single-sided 1.6mm FR4 PCB.

Does the DST847BDJ support automotive applications?

Standard production is not explicitly qualified for automotive use. For applications requiring AEC-Q100/101/104/200 qualification and PPAP capability, direct contact with Diodes Incorporated or a local representative is required.

What is the ESD protection rating for this device?

The device has an Electrostatic Discharge Human Body Model (HBM) rating of 4,000V (JEDEC Class 3A) and a Machine Model (MM) rating of 200V (Class B).