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The DST857BDJ-7 is a dual PNP small signal transistor manufactured by Diodes Incorporated in an SOT963 surface-mount package. It features epitaxial planar die construction and operates within a collector-emitter voltage range of -45 V and a continuous collector current of -100 mA. The device provides a DC current gain (hFE) between 200 and 470 at -2 mA, with a maximum power dissipation of 300 mW. It supports an operating temperature range from -55°C to +150°C and includes ESD protection rated at 4,000 V via the human body model.
Verify the specific ordering suffix '-7' corresponds to the standard reel packaging containing 10,000 units per 7-inch reel. Confirm that the 'TB' marking code matches the required identification for production integration. Ensure compliance with RoHS 2 and RoHS 3 directives if environmental regulations apply to the final assembly.
Select this component when a matched dual PNP pair is required in a minimal footprint. The SOT963 case size offers space savings compared to larger packages while maintaining a 300 mW power dissipation capability. Consider the complementary NPN variant, DST847BDJ, if a complete push-pull or differential stage is needed within the same physical envelope.
This part belongs to the DST857 series of dual small signal transistors produced by Diodes Incorporated. It serves as the PNP counterpart to the NPN DST847BDJ, providing matched characteristics for balanced circuit designs. The SOT963 package is designed specifically for high-density surface mount applications where board real estate is constrained.
The datasheet explicitly identifies the DST847BDJ as the complementary NPN type available from the same manufacturer. No other cross-manufacturer substitutes are documented in the provided source material.