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The DTM3A25P20NFDB-7 is a surface-mount hybrid transistor array combining a PNP bipolar junction transistor and an N-channel MOSFET in a U-DFN2020-6 package. The BJT offers a continuous collector current of -3 A with a collector-emitter voltage rating of -25 V. The integrated MOSFET provides a drain-source voltage of 20 V and a continuous drain current of 0.63 A at 25°C. Total power dissipation reaches up to 2.47 W under optimal thermal conditions.
Verify component authenticity through authorized Diodes Incorporated channels. Confirm the specific ordering suffix matches required reel quantities. Check datasheet revision history for any parameter updates. Ensure storage conditions adhere to moisture sensitivity level 1 requirements prior to soldering.
Select this component when space constraints require integrating both PNP and N-channel switching elements into a single footprint. Evaluate thermal resistance values against the specific PCB copper area available for heat sinking. Verify that the 20 V MOSFET rating aligns with the maximum circuit voltage to prevent breakdown.
This device belongs to the DTM3A25 series, which integrates complementary transistor technologies. It serves as a solution for designs needing distinct switching behaviors from a single package. The U-DFN2020-6 form factor supports automated surface mount assembly processes while maintaining robust electrical performance.
No public confirmed substitute part numbers are documented.