DXTC3C100PD-13

Overview

The DXTC3C100PD-13 is a dual bipolar junction transistor (BJT) containing matched NPN and PNP transistors in a single PowerDI5060-8/SWP package. It features a continuous collector current of 3A for both polarities and peak pulse currents of 8A. The NPN transistor offers a typical saturation resistance of 90mΩ, while the PNP provides 110mΩ. Breakdown voltages exceed ±100V for collector-emitter configurations. Thermal characteristics include a power dissipation of 1.47W and a junction-to-ambient thermal resistance of 85°C/W under standard test conditions.

Feature Summary

• Dual configuration integrating high-voltage NPN and PNP transistors within a compact surface-mount footprint
• Low saturation resistance design optimized for efficient switching and reduced conduction losses
• Robust thermal management capabilities supported by an exposed copper lead frame for effective heat dissipation

Applications

• Power Management Systems
• Load Switches
• MOSFET and IGBT Gate Drivers

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm that the marking code matches the specified product type and date code format. Ensure compliance with RoHS directives and check for specific automotive qualification requirements if applicable to the target application environment.

Selection Notes

Select this component when space-constrained designs require complementary NPN/PNP pairs with high voltage ratings. Evaluate thermal derating curves against expected ambient temperatures and PCB copper area constraints. Consider the low saturation voltage benefits for driving high-current loads efficiently compared to standard discrete alternatives.

Part Context

This part belongs to the DXTC series of low saturation transistors manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package, which is designed for high-density applications requiring superior thermal performance. The series targets modern electronics needing reliable switching solutions in minimal board space.

Replacement Considerations

Direct substitutes must match the PowerDI5060-8/SWP package dimensions and electrical parameters. Verify equivalent breakdown voltages and saturation resistances. Cross-reference pinout configurations to ensure compatibility with existing PCB layouts without redesigning trace connections.

FAQ

What is the maximum peak pulse collector current?

The maximum peak pulse collector current is 8A for the NPN transistor and -8A for the PNP transistor.

How is the device marked on the top view?

The top view marking consists of 'DXTC3' and 'C100PD' followed by a YYWW date code representing the year and week of manufacture.

What is the moisture sensitivity level?

The device has a Moisture Sensitivity Level of 1 per J-STD-020.