DXTC3C100PDQ-13

DXTC3C100PDQ-13

$0.86
  • Description:TRANS NPN/PNP 100V POWERDI5060-8
  • Series:-

SKU:487706a7c386 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 100V POWERDI5060-8
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):3A
  • Voltage - Collector Emitter Breakdown (Max):100V
  • Vce Saturation (Max) @ Ib, Ic:330mV @ 300mA, 3A / 325mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 500mA, 10V / 170 @ 500mA, 10V
  • Power - Max:1.47W
  • Frequency - Transition:130MHz, 100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8 (Type UXD)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DXTC3C100PDQ-13

Overview

The DXTC3C100PDQ-13 is a dual low saturation transistor from Diodes Incorporated, integrating one NPN and one PNP bipolar junction transistor within a single PowerDI5060-8/SWP package. The NPN device supports a continuous collector current of 3A with a peak pulse current of 8A, while the PNP device handles -3A continuous and -8A peak currents. Both transistors offer breakdown voltages exceeding ±100V. Typical saturation resistances are 90mΩ for the NPN and 110mΩ for the PNP. The component operates across a temperature range of -55°C to +150°C and meets AEC-Q101 automotive qualification standards.

Feature Summary

  • Dual integrated NPN and PNP transistors in a compact surface-mount package
  • High continuous collector current capability up to 3A per die
  • Low saturation resistance for efficient power switching
  • Automotive-grade reliability with AEC-Q101 qualification

Applications

  • Power management circuits
  • Load switches
  • MOSFET and IGBT gate drivers

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard 2,500-unit reel packaging configuration. Confirm that the 'Q' designation aligns with the required automotive quality specifications and IATF16949 manufacturing certification. Ensure the selected distributor provides traceability documentation consistent with PPAP requirements for automotive supply chains.

Selection Notes

Select this component when space-constrained designs require complementary NPN/PNP switching capabilities. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application. Consider the high peak pulse current rating for handling transient loads during switching operations.

Part Context

This part belongs to Diodes Incorporated's DXTC series of low saturation transistors designed for high-efficiency switching applications. It utilizes the PowerDI5060-8 package to provide enhanced thermal performance compared to traditional plastic packages. The series targets modern electronics requiring reduced conduction losses and improved heat dissipation in dense layouts.

Replacement Considerations

Direct replacements must match the PowerDI5060-8 footprint and electrical ratings. Verify pinout compatibility between the NPN and PNP dies. Check if alternative manufacturers offer equivalent AEC-Q101 qualified dual transistors with similar saturation voltage profiles.

DXTC3C100PDQ-13DXTC3C100PDQ-13
$0.86
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