DXTN3C100PD-13

Overview

The DXTN3C100PD-13 is a dual NPN low saturation transistor from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a collector-emitter breakdown voltage (BVCEO) of 100V and supports a continuous collector current (IC) of 3A with an 8A peak pulse capability. The device offers a typical collector-emitter saturation resistance (RCE(sat)) of 90mΩ at IC=1A and IB=50mA. Electrical characteristics include a DC current gain (hFE) ranging from 150 to 250 at IC=500mA, and a current gain-bandwidth product (fT) of 130MHz. Thermal performance specifies a junction-to-ambient resistance of 85°C/W under steady-state conditions.

Feature Summary

• Dual NPN configuration providing two independent transistors within a single compact surface-mount package for space-constrained designs.
• Low saturation voltage and resistance characteristics optimized for efficient switching and reduced power dissipation in high-current applications.
• High voltage tolerance with a 100V collector-emitter breakdown rating suitable for demanding power management environments.

Applications

• Power Management
• Motor Drive
• Linear Mode Voltage Regulators
• Backlighting Applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard reel quantity of 2,500 units per 13-inch tape and 12mm width as documented. Confirm that the component meets RoHS 2 and RoHS 3 compliance requirements if environmental regulations apply to your manufacturing process. Ensure compatibility with IATF 16949 certified facilities if automotive qualification standards are required for your final assembly.

Selection Notes

Select this component when a dual NPN solution is needed with a minimum 100V rating and high current handling up to 3A continuous. Consider the PowerDI5060-8 package dimensions for PCB layout constraints and thermal dissipation needs. Evaluate the saturation resistance and current gain specifications against your base drive capabilities to ensure optimal switching efficiency and thermal performance in your specific circuit topology.

Part Context

This part belongs to Diodes Incorporated's series of dual low saturation transistors designed for high-efficiency switching. It serves as the complementary NPN counterpart to the DXTP3C100PD PNP device, allowing for matched pairs in push-pull or bridge configurations. The PowerDI5060-8 package provides enhanced thermal performance compared to traditional plastic packages while maintaining a small footprint.

Replacement Considerations

The DXTP3C100PD is the complementary PNP version within the same family. Verify pinout compatibility and electrical symmetry if substituting for other dual BJT packages. Check datasheet parameters for equivalent BVCEO, IC ratings, and RCE(sat) values to ensure functional interchangeability in existing designs.