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The DZ4J030K0R is a dual silicon epitaxial planar Zener diode manufactured by Panasonic. It features two parallel Zener elements within an SMini4-F3-B package, measuring 2.1 mm in length, 2.0 mm in width, and 0.7 mm in height. The device provides a nominal Zener voltage of 30 V with a tolerance of ±5% at a test current of 5 mA. Total power dissipation is rated at 200 mW, with an operating ambient temperature range from -40 °C to +85 °C. Key electrical parameters include a maximum reverse leakage current of 1 µA at 1 V, a Zener impedance of 120 Ω, and a forward voltage of 1.0 V at 10 mA.
Verify the specific ordering suffix K0R against official Panasonic documentation to confirm packaging details and compliance status. Confirm availability through authorized distributors as standard lead times may vary. Ensure design-in reviews account for the absolute maximum ratings regarding junction temperature and thermal dissipation constraints during procurement planning.
Select this component when a dual-channel Zener solution is required in a minimal footprint. The SMini4-F3-B package supports high-density PCB layouts. Verify that the 30 V breakdown voltage aligns with circuit requirements and that the 200 mW power rating accommodates the expected thermal load on the designated glass epoxy print board.
This part belongs to the Panasonic DZ4J series of surface mount Zener diodes. It utilizes the JEITA SC-113BB compatible SMini4-F3-B package. The series is designed for general-purpose electronic equipment, offering a balance between miniaturization and reliable voltage regulation characteristics for standard industrial and consumer applications.
Direct functional substitutes are not explicitly listed in the provided datasheet. Evaluate other Panasonic DZ4J series variants or equivalent dual Zener packages from other manufacturers based on matching pinout, voltage tolerance, and package dimensions.
The device contains two Zener diodes connected in parallel, identified as Dual DZ2J030 (Parallel).
The Zener voltage (VZ) is measured at a test current (IZ) of 5 mA, with the temperature controlled at 25 °C according to JIS C 7031 standards.
The maximum junction temperature (Tj) is 150 °C.