Gate Driver E-L6571BD product image

E-L6571BD

$1.06
  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:57c227093817 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

E-L6571BD is listed in the Gate Driver range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is IC GATE DRVR HALF-BRIDGE 8SO. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for E-L6571BD

  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 16.6V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):170mA, 270mA
  • Input Type:RC Input Circuit
  • Rise / Fall Time (Typ):-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Gate Driver datasheet and documents for E-L6571BD

E-L6571BD

Gate Driver Overview

The L6571BD is a high voltage half bridge driver with a built-in oscillator, designed to drive external N-channel power MOSFETs and IGBTs. It features a programmable oscillator frequency set by external components and supports logic signal driving. Key electrical parameters include a supply voltage range of 10V to 16.6V, a maximum high-side bootstrap voltage of 600V, and peak output currents of 270mA sink and 170mA source. The device operates within a temperature range of -40°C to 150°C TJ.

Gate Driver Feature Summary

  • High voltage rail capability up to 600V for bootstrap operation
  • Built-in dead time circuitry to prevent cross-conduction
  • ESD protection and dV/dt immunity up to ±50V/ns
  • Under voltage lockout with hysteresis for reliable startup

Gate Driver Applications

  • Resonant converters
  • Flyback converters
  • Half-bridge power supplies

Gate Driver Procurement Notes

Verify the specific suffix 'BD' against official STMicroelectronics documentation to confirm package type and tape/reel specifications. Ensure compatibility with the required dead time configuration, as variants like L6571A and L6571B differ in internal timing. Confirm RoHS compliance status and moisture sensitivity level prior to integration into the manufacturing process.

Gate Driver Selection Notes

Select this component when a dedicated half-bridge driver with an integrated oscillator is required for resonant or flyback topologies. Consider the L6571BD variant specifically if the application demands the associated dead time characteristics compared to other family members. Evaluate the 600V rating against the system's switching voltage requirements and ensure the 170mA/270mA drive current meets the gate charge needs of the target power devices.

Gate Driver Part Context

The L6571 belongs to a family of high-voltage half-bridge drivers from STMicroelectronics. Variants such as L6571A and L6571B are distinguished primarily by their internal dead time values (1.25µs and 0.72µs respectively). The BD suffix typically denotes specific packaging or ordering information rather than a functional change in the core driver architecture.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

E-L6571BDE-L6571BD
$1.06
Buy Now