ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MVF 200MM QUALIFIED MATERIAL
- Series：*
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The E3M0032120U2 is a third-generation automotive-grade silicon carbide (SiC) MOSFET from Wolfspeed. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 32 milliohms. The device utilizes the TSC (U2) package configuration, designed for high-efficiency power conversion in electric vehicle applications.
Feature Summary
- Automotive-grade reliability with AEC-Q101 qualification
- Third-generation SiC technology for enhanced efficiency
- Optimized thermal performance via TSC (U2) packaging
Applications
- On-board chargers (OBC)
- DC-DC converters
- Traction inverters
Procurement Notes
Verify the specific suffix U2 against the manufacturer's current datasheet to confirm pinout and thermal specifications. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference the part number with official distributor catalogs to confirm availability status and lead times prior to ordering.
Selection Notes
Select this component for designs requiring low conduction losses at 1200V ratings. The 32mOhm resistance offers a balance between cost and performance for mid-power automotive stages. Consider the TSC package constraints for PCB layout and thermal management strategies compared to standard TO-263 variants.
Part Context
This part belongs to Wolfspeed's E-Series discrete SiC MOSFETs, specifically the third generation optimized for automotive markets. It complements other devices in the portfolio by offering a specific on-resistance value tailored for efficient power switching in EV powertrains and auxiliary systems.
Replacement Considerations
Check for direct substitutes within the same Wolfspeed E-Series family with similar Rds(on) and voltage ratings. Verify compatibility with existing gate drive circuits when replacing older generations or different manufacturers' components.
