E3M0040120K

Overview

The Wolfspeed E3M0040120K is a third-generation silicon carbide (SiC) MOSFET in a TO-247-4 package. It features a drain-source breakdown voltage of 1200 V and a maximum on-resistance of 40 mΩ at 25°C. The device supports a continuous drain current of 57 A and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 3.6 V, total gate charge of 94 nC, and power dissipation of 242 W. It is designed for high-voltage, high-temperature applications with automotive qualification.

Feature Summary

• Complies with AEC-Q101 automotive standards and supports PPAP requirements.
• Utilizes Wolfspeed's third-generation technology for industry-leading figure of merit.
• Features low output capacitance for high-speed switching capabilities.
• Includes an intrinsic body diode with low reverse recovery charge.

Applications

• On-board electric vehicle battery chargers
• High-voltage DC/DC converters
• Traction inverters
• Photovoltaic inverters

Procurement Notes

Verify the specific suffix 'K' corresponds to the required tape-and-reel or tube packaging configuration as defined by Wolfspeed. Confirm that the component meets the AEC-Q101 reliability standards required for your specific automotive application tier. Ensure the ordering information matches the exact TO-247-4 lead frame and pinout specifications provided in the official datasheet to prevent integration errors.

Selection Notes

Select this component when designing systems requiring 1200V blocking capability with minimal conduction losses. The 40 mΩ Rds(on) offers a balance between efficiency and cost for medium-power applications. Consider the TO-247-4 package for through-hole mounting solutions where thermal management via extruded heatsinks is feasible. Evaluate the 57 A continuous current rating against peak load requirements to ensure adequate safety margins.

Part Context

This part belongs to Wolfspeed's E-Series, which expands their silicon carbide portfolio with automotive-grade, moisture-resistant devices. The E-Series complements the established C-Series and C3M product lines, offering enhanced ruggedness and lower switching losses. It is designed to support the growing demand for efficient power conversion in electric mobility and renewable energy infrastructure.

Replacement Considerations

Direct replacements include the C3M0040120K from the same manufacturer family. Verify pin compatibility and thermal characteristics before substitution. Other Wolfspeed SiC MOSFETs with similar voltage and resistance ratings may serve as alternatives if form-factor constraints allow.