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Product Detailed Parameters
- Description：160m 1200V SiC FET, TO-263-7 XL
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：208mOhm @ 8.5A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 2.33mA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed E3M0160120J2-TR is a third-generation silicon carbide (SiC) MOSFET designed for automotive applications. It features an N-channel enhancement mode configuration housed in a TO-263-7XL package with a separate Kelvin source pin. The device supports a maximum drain-source voltage of 1200V and offers a typical on-resistance of 208mΩ at 25°C. It operates within a junction temperature range of -55°C to +175°C, ensuring robust performance under high thermal stress.
Feature Summary
- Third-generation SiC technology optimized for low switching losses and reduced gate ringing
- Automotive qualification compliant with AEC-Q101 standards and PPAP capable
- Integrated fast intrinsic diode with minimal reverse recovery charge
- Enhanced isolation via 4.7mm creepage distance between drain and source
Applications
- Motor Control systems
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify the specific ordering suffix '-TR' to confirm tape-and-reel packaging availability. Confirm that the component meets current RoHS and REACh compliance requirements for your region. Ensure the procurement channel provides valid traceability documentation required for automotive-grade components.
Selection Notes
Select this component when high blocking voltage and low conduction loss are critical. The separate driver source pin facilitates precise gate control, minimizing parasitic inductance effects. Consider the thermal resistance characteristics for heatsink design to maintain optimal junction temperatures during continuous operation.
Part Context
This part belongs to Wolfspeed's E-Series Automotive line, utilizing advanced silicon carbide material properties. It represents a progression in power density and efficiency compared to previous generations, specifically tailored for demanding electric vehicle and industrial power conversion environments.
Replacement Considerations
Direct replacements must match the 1200V rating, TO-263-7XL package, and similar Rds(on) specifications. Verify pinout compatibility, particularly the Kelvin source connection, before substituting with other manufacturers' SiC MOSFETs.
