EC3A03B-TL-H

Overview

The EC3A03B is an N-channel Silicon Junction FET designed for impedance conversion and infrared sensor applications. It features a small gate-to-source leakage current (IGSS) of -500 pA maximum and low input capacitance (Ciss) of 1.7 pF typical at VDS=10V, f=1MHz. The device operates with a drain-to-source voltage (VDSS) rating of 40 V and a drain current (ID) of 1 mA. Key electrical characteristics include a cutoff voltage (VGS(off)) ranging from -1.5 V to -4.0 V and a forward transfer admittance (|yfs|) of 0.13 mS typical. It is housed in an ultraminiature ECSP1006-3 package.

Feature Summary

• Ultraminiature package facilitates miniaturization in end products
• Small gate-to-source leakage current (IGSS)
• Low input capacitance (Ciss)

Applications

• Impedance converter circuits
• Infrared sensor interfaces

Procurement Notes

Verify the manufacturer origin carefully, as the model prefix 'EC' typically indicates SANYO Electric Co., Ltd., while the requested brand is onsemi. Confirm if the specific part number corresponds to an onsemi product or if it is a legacy SANYO component. Ensure the datasheet matches the exact ordering number ENN7295A provided in the source material before procurement.

Selection Notes

Select this component when ultra-low input capacitance and minimal gate leakage are critical for signal integrity in high-impedance circuits. The 40 V VDSS rating supports moderate voltage swings, while the 1 mA ID limit restricts usage to low-current sensing or buffering roles. Evaluate thermal constraints given the 100 mW power dissipation capability in the small ECSP1006-3 package.

Part Context

This component is an N-channel JFET manufactured by SANYO Electric Co., Ltd., identified by the ordering number ENN7295A. It belongs to a class of ultraminiature field-effect transistors optimized for low-noise, high-impedance input stages. The device utilizes an ECSP1006-3 surface-mount package to minimize footprint in compact electronic designs.

Replacement Considerations

No official substitute part numbers are documented in the provided source material. When selecting alternatives, prioritize JFETs with comparable Ciss (<2 pF), IGSS (<500 pA), and VDSS (≥40 V) ratings. Verify that replacement devices support the same ECSP1006-3 or compatible pinout configuration.