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Product Detailed Parameters
- Description：MOSFET P-CH 30V 7.5A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：875 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8315-TL-H is a single P-channel Power MOSFET manufactured by onsemi. It utilizes trench technology to achieve low on-resistance, rated at 25 milliohms. The device supports a maximum drain-source voltage of -30 volts and a continuous drain current of -7.5 amperes. It operates within an extended temperature range up to 150 degrees Celsius. The component is housed in an 8-pin ECH surface-mount package with tin/bismuth terminal finishes.
Feature Summary
- Trench technology design for minimized on-resistance
- ESD-protected gate structure
- Compatible with 4-volt drive logic levels
Applications
- Load switching circuits
- Protection switches for lithium-ion batteries
- Motor driver interfaces
Procurement Notes
Verify the specific part number against official onsemi documentation to confirm exact electrical characteristics and packaging details. Ensure compliance with RoHS and halogen-free requirements as stated in the manufacturer's specifications. Cross-reference the datasheet for absolute maximum ratings to prevent operational exceedance during integration.
Selection Notes
Select this component for applications requiring efficient power management with low conduction losses. The single P-channel configuration simplifies circuit design for high-side switching. Verify that the thermal dissipation capabilities align with the system's heat management strategy given the 1.5-watt power dissipation rating.
Part Context
This device belongs to onsemi's ECH series of power MOSFETs, designed for compact surface-mount applications. The ECH package provides a small footprint suitable for space-constrained designs. The series emphasizes performance through advanced trench processing techniques to enhance efficiency.
