ECH8501-TL-H

Overview

The onsemi ECH8501-TL-H is a dual bipolar junction transistor array featuring one NPN and one PNP transistor. It is housed in an 8-lead ECH surface-mount package with dimensions of 2.9mm length, 2.3mm width, and 0.9mm height. The device supports a maximum collector-emitter voltage (Vceo) of 30V and a continuous collector current (Ic) of 5A. Key electrical characteristics include a DC current gain (Hfe) of 200 at 500mA and 2V, a saturation voltage (Vce(sat)) of 110mV under specified conditions, and a transition frequency (fT) of 280MHz. Maximum power dissipation is rated at 1.6W, with a maximum operating junction temperature of +150°C.

Feature Summary

• Integrated dual configuration combining NPN and PNP transistors in a single compact package
• High-speed switching capability indicated by 280MHz transition frequency
• Low saturation voltage for efficient power handling
• Robust thermal performance supporting operation up to +150°C

Applications

• High-speed digital logic circuits requiring complementary switching
• Power management modules utilizing complementary pairs
• Signal processing applications needing matched NPN/PNP characteristics

Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the component status aligns with project requirements, as availability may vary. Ensure that the 8-ECH package footprint matches the design board layout precisely to avoid assembly issues.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a minimal footprint. The 5A current rating and 30V breakdown voltage suit moderate-power applications. Consider the 280MHz fT for high-frequency signal paths. Verify thermal constraints given the 1.6W power dissipation limit in the small ECH package.

Part Context

This part belongs to onsemi's ECH series of surface-mount discrete semiconductors. The ECH package provides a compact solution for dual transistor arrays. It is distinct from MOSFET offerings in the same series, serving specifically as a BJT array for complementary circuit designs.

Replacement Considerations

Check for direct pin-compatible replacements within the ECH series or other manufacturers offering 8-lead dual BJT arrays with similar 30V/5A ratings. Ensure transition frequency and saturation voltage parameters meet the original design specifications.