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The onsemi ECH8502-TL-H is a P-channel enhancement mode MOSFET designed for surface-mount applications. It features an ECH package with eight pins, providing a maximum continuous drain current of 6 A and a maximum drain-source voltage of 12 V. The device exhibits a maximum drain-source on-resistance of 78 mΩ and a typical gate charge of 11 nC at 4.5 V. It contains two isolated chips per die, operates up to a maximum junction temperature of +150 °C, and has physical dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height.
Verify the specific ordering suffix TL-H against official onsemi documentation to confirm tape-and-reel packaging and lead-free compliance status. Ensure the component matches the exact pinout and thermal specifications required for the target PCB layout before finalizing procurement orders.
Select this component when a P-channel MOSFET with a 12 V rating and 6 A current capacity is required in an 8-lead surface-mount form factor. Consider the 78 mΩ Rds(on) for conduction loss calculations and verify that the gate drive voltage aligns with the 11 nC gate charge specification for optimal switching performance.
This part belongs to onsemi's discrete power transistor portfolio, specifically utilizing the ECH (Enhanced Chip Height) package technology. The ECH series is engineered to provide improved thermal dissipation and mechanical stability compared to standard SMD packages, making it suitable for dense board layouts where heat management is critical.
Cross-reference with other onsemi ECH-series P-channel MOSFETs such as the ECH8652-TL-H for higher voltage ratings. Verify pin compatibility and electrical parameters against alternative manufacturers' equivalents like NCP or FDS series parts if supply constraints exist.