ECH8502-TL-H

ECH8502-TL-H

$0.91
  • Description:TRANS NPN/PNP 100V/50V 5A 8ECH
  • Series:-

SKU:157b39d67a19 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 100V/50V 5A 8ECH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):5A
  • Voltage - Collector Emitter Breakdown (Max):100V, 50V
  • Vce Saturation (Max) @ Ib, Ic:120mV @ 125mA, 2.5A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
  • Power - Max:1.6W
  • Frequency - Transition:290MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-ECH
  • Grade:-
  • Qualification:-

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ECH8502-TL-H

Overview

The onsemi ECH8502-TL-H is a P-channel enhancement mode MOSFET designed for surface-mount applications. It features an ECH package with eight pins, providing a maximum continuous drain current of 6 A and a maximum drain-source voltage of 12 V. The device exhibits a maximum drain-source on-resistance of 78 mΩ and a typical gate charge of 11 nC at 4.5 V. It contains two isolated chips per die, operates up to a maximum junction temperature of +150 °C, and has physical dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height.

Feature Summary

  • P-channel enhancement mode configuration for high-side switching applications
  • Dual isolated chip architecture within a compact 8-pin ECH package
  • Low on-resistance characteristics optimized for efficient power handling

Applications

  • DC-DC converter input/output stages
  • Load switch circuits requiring low voltage operation
  • Power management modules for portable electronics

Procurement Notes

Verify the specific ordering suffix TL-H against official onsemi documentation to confirm tape-and-reel packaging and lead-free compliance status. Ensure the component matches the exact pinout and thermal specifications required for the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component when a P-channel MOSFET with a 12 V rating and 6 A current capacity is required in an 8-lead surface-mount form factor. Consider the 78 mΩ Rds(on) for conduction loss calculations and verify that the gate drive voltage aligns with the 11 nC gate charge specification for optimal switching performance.

Part Context

This part belongs to onsemi's discrete power transistor portfolio, specifically utilizing the ECH (Enhanced Chip Height) package technology. The ECH series is engineered to provide improved thermal dissipation and mechanical stability compared to standard SMD packages, making it suitable for dense board layouts where heat management is critical.

Replacement Considerations

Cross-reference with other onsemi ECH-series P-channel MOSFETs such as the ECH8652-TL-H for higher voltage ratings. Verify pin compatibility and electrical parameters against alternative manufacturers' equivalents like NCP or FDS series parts if supply constraints exist.

ECH8502-TL-HECH8502-TL-H
$0.91
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