EDW2032BBBG-6A-F-R TR

Memory IC Overview

The EDW2032BBBG-6A-F-R TR is a GDDR5 SGRAM manufactured by Micron Technology. It features a density of 2Gb organized as 4 Meg x 32 I/O across 16 banks, or 8 Meg x 16 I/O. The device supports data rates up to 6.0 Gb/s with a cycle time of 5.0 ns. It operates at VDD and VDDQ voltages of 1.6V/1.5V ±3% or 1.35V ±3%. The component utilizes an 8 n-bit prefetch architecture and includes features such as on-die termination (ODT), data bus inversion (DBI), and cyclic redundancy check (CRC). It is housed in a 170-ball FBGA package measuring 12mm x 14mm.

Memory IC Feature Summary

• Supports high-speed data transfer rates up to 6.0 Gb/s with an 8 n-bit prefetch architecture for efficient memory access.
• Includes advanced signal integrity features such as Data Bus Inversion (DBI) and Cyclic Redundancy Check (CRC) for error detection.
• Features programmable CAS latency and Write latency to optimize performance for specific system requirements.
• Integrates On-Die Termination (ODT) with auto-calibration via an external ZQ resistor to reduce power consumption and noise.

Memory IC Applications

• High-performance graphics processing units
• Professional visualization workstations
• Advanced gaming consoles

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required system timing constraints. Confirm that the -R designation aligns with the intended reel-based assembly process. Ensure the lead-free and halogen-free environmental compliance meets regulatory standards for the target market. Validate the 170-ball FBGA footprint compatibility during PCB layout.

Memory IC Selection Notes

Select this component when a 2Gb capacity with a 32-bit interface width is required for bandwidth-intensive applications. Consider the 6.0 Gb/s speed grade if the system design supports the associated timing parameters. Evaluate the thermal management capabilities, as the commercial temperature range extends up to +95°C. Ensure the power supply design accommodates the specified voltage tolerances for both VDD and VDDQ.

Memory IC Part Context

This part belongs to the Elpida Memory GDDR5 SGRAM family, now under Micron Technology. It represents a generation of graphics memory designed to bridge the gap between standard DRAM and specialized video memory. The device integrates multiple bank groups to allow concurrent operations, enhancing throughput compared to earlier single-bank architectures.

Memory IC Replacement Considerations

Compatible substitutes include other GDDR5 devices from the same manufacturer offering identical 2Gb density and 170-ball FBGA packaging. Verify pin-to-pin compatibility and electrical specifications before substitution.

Memory IC FAQ

How is the memory organization configured?

The device can be configured as 4 Meg x 32 I/O or 8 Meg x 16 I/O, determined by the EDC pin state at power-up.

What is the function of the ZQ ball?

The ZQ ball serves as an external reference for output drive calibration, requiring a 120Ω resistor connected to VSSQ.

Does the device support automatic refresh?

Yes, it supports both auto-refresh and self-refresh modes, requiring 16,384 cycles every 32ms.