EFC6612R-TF

$0.32

Description：MOSFET 2N-CH 20V 23A 6CSP
Series：-

SKU:6cb57f0e6211 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 23A 6CSP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.5W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：6-CSP (1.77x3.54)
Grade：-
Qualification：-

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EFC6612R-TF

Overview

The EFC6612R-TF is a dual N-channel depletion-mode MOSFET in a CSP6 package. It features a 20 V source-to-source breakdown voltage and a maximum continuous source current of 23 A. The device exhibits a typical on-state resistance of 5.1 mΩ at VGS = 4.5 V. Operating with a 2.5 V drive capability, it includes an integrated protection diode and supports 2 KV ESD HBM ratings. Total power dissipation reaches 2.5 W when mounted on a ceramic substrate, with a junction temperature limit of 150 °C.

Feature Summary

Dual N-channel configuration with common-drain topology
Integrated protection diode for circuit safeguarding
Capable of operation with low 2.5 V gate drive signals
Robust electrostatic discharge tolerance up to 2 KV HBM

Applications

Lithium-ion battery charging switches
Lithium-ion battery discharging switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets required environmental standards such as halogen-free compliance before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring low-voltage control of high-current paths. Ensure the driving circuit can supply sufficient current to manage the total gate charge within the desired switching frequency constraints.

Part Context

This part belongs to the EFC series of power MOSFETs manufactured by onsemi. It utilizes the EFCP CSP package designed for surface-mount assembly. The dual-channel design allows for compact implementation of parallel or bridge configurations.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-referencing requires matching depletion-mode characteristics, voltage ratings, and package dimensions.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.