Single Diodes EGF1THE3_A/H product image

EGF1THE3_A/H

$0.77
  • Description:DIODE STANDARD 1300V 1A DO214BA
  • Series:Superectifier®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:59723b0062d3 Category: Brand:

  
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EGF1THE3_A/H is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE STANDARD 1300V 1A DO214BA. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for EGF1THE3_A/H

  • Description:DIODE STANDARD 1300V 1A DO214BA
  • Series:Superectifier®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1300 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:3 V @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 1300 V
  • Capacitance @ Vr, F:8pF @ 4V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-214BA
  • Supplier Device Package:DO-214BA (GF1)
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Diodes datasheet and documents for EGF1THE3_A/H

EGF1THE3_A/H

Single Diodes Overview

The EGF1THE3_A/H is a surface-mount glass-passivated ultrafast rectifier manufactured by Vishay General Semiconductor. It features a Superectifier structure and operates with a maximum repetitive peak reverse voltage of 1300 V and an average forward rectified current of 1.0 A. The device exhibits an ultrafast reverse recovery time of 75 ns and supports a peak forward surge current of 20 A. It is housed in a GF1 (DO-214BA) package, rated for junction temperatures up to 150 °C, and meets the AEC-Q101 automotive qualification standard.

Single Diodes Feature Summary

  • Superectifier structure designed for high reliability under demanding conditions
  • Cavity-free glass-passivated junction construction
  • Ultrafast reverse recovery characteristics enabling low switching losses
  • Avalanche surge energy capability for robust operation

Single Diodes Applications

  • High voltage rectification in photoflash applications

Single Diodes Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the ordering suffix matches the required delivery mode and tape specifications. Ensure compliance with RoHS standards and AEC-Q101 automotive requirements as documented in the official datasheet before finalizing procurement orders.

Single Diodes Selection Notes

Select this component for designs requiring high-voltage isolation and rapid switching speeds within a compact surface-mount footprint. Evaluate thermal management strategies to maintain junction temperatures within the specified operating range. Consider the avalanche energy rating when designing circuits subject to transient voltage spikes or inductive load switching.

Single Diodes Part Context

This part belongs to the EGF1T series of ultrafast rectifiers from Vishay General Semiconductor. The series utilizes the Superectifier technology to provide enhanced reliability compared to standard rectifiers. The GF1 package offers a standardized mounting profile compatible with automated placement equipment commonly used in modern electronics manufacturing.

Single Diodes Replacement Considerations

EGF1AHE3_A/H

EGF1THE3_A/HEGF1THE3_A/H
$0.77
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