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EL7202CS-T7 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR LOW-SIDE 8SOIC. Review the specifications below when checking this part for your BOM.
The EL7202CS-T7 is a high-speed, dual-channel power MOSFET gate driver manufactured by Renesas Electronics Corporation. It features a proprietary Turbo-Driver circuit that delivers peak output currents of 2.0 A into highly capacitive loads. The device operates within a supply voltage range of 4.5 V to 16 V and utilizes an inverting logic configuration. Packaged in an 8-pin SOIC format with a tape-and-reel shipping method, it supports surface-mount assembly. The component is designed for low input capacitance and high noise immunity, ensuring reliable performance in demanding electronic applications.
Verify the specific suffix 'T7' corresponds to the tape-and-reel packaging variant rather than tube packaging. Confirm RoHS compliance status as historical data indicates variations across production runs. Ensure the inverting configuration aligns with system design requirements before procurement. Cross-reference the manufacturer part number against official Renesas databases to confirm current availability and lifecycle status.
Select this component when matched rise and fall times are critical for reducing timing errors in high-speed digital circuits. The dual-channel architecture is suitable for applications requiring simultaneous control of multiple power switches. Consider the 2.0 A peak current capability for driving highly capacitive loads efficiently. The wide operating voltage range provides flexibility for various logic interface levels.
The EL7202 belongs to the EL72xx series of high-speed dual-channel power MOSFET drivers. This family improves upon industry standard DS0026 clock drivers by offering superior response times and reduced clock skew. The series is characterized by its ability to deliver high peak currents while maintaining low supply current consumption, bridging the performance gap between bipolar and CMOS technologies.
Public confirmed substitute part numbers are not available in the provided documentation.
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