EL816(B)-F

Overview

The EL816(B)-F is a single-channel transistor output optocoupler manufactured by Everlight Electronics. It integrates an infrared emitting diode with a phototransistor detector in a compact 4-pin DIP package. The device provides high isolation voltage of 5000 Vrms between input and output circuits. It features a current transfer ratio ranging from 50% to 600% at a forward current of 5mA and collector-emitter voltage of 5V. The component supports a maximum operating temperature of +110°C and complies with RoHS standards, ensuring it is lead-free.

Feature Summary

• High isolation voltage capability between input and output circuits
• Wide current transfer ratio range for flexible signal transmission
• Compact small outline package design for space-constrained applications
• Lead-free construction compliant with environmental regulations

Applications

• Programmable controllers
• System appliances and measuring instruments
• Telecommunication equipment
• Home appliances such as fan heaters
• Signal transmission between circuits of different potentials and impedances

Procurement Notes

Verify the specific CTR binning code associated with the suffix B to ensure it matches the required gain characteristics for the target circuit design. Confirm that the 4-pin DIP packaging aligns with the printed circuit board footprint requirements. Ensure compliance with RoHS directives if operating in regulated regions. Check for UL and VDE approval markings on the component body or datasheet to validate safety certifications for end-use equipment.

Selection Notes

Select this component when galvanic isolation is required between low-voltage control logic and higher-voltage loads. The wide CTR range accommodates variations in LED drive currents while maintaining reliable switching. Consider the 5000 Vrms isolation rating for applications involving mains voltage or industrial noise environments. The NPN phototransistor output is suitable for sinking current in standard digital interface circuits.

Part Context

The EL816 series consists of infrared emitting diodes optically coupled to phototransistor detectors. These devices are available in both wide-lead spacing DIP and surface mount options. The series is designed for general-purpose isolation applications requiring reliable signal transfer across isolated boundaries. The EL816(B)-F variant specifically denotes a particular current transfer ratio bin within the broader EL816 product family.

Replacement Considerations

Direct replacements include other EL816 variants with compatible pinouts and isolation ratings, such as EL817 or EL814, provided their CTR specifications meet the application requirements. Verify that substitute components offer equivalent isolation voltage and package dimensions to maintain mechanical and electrical integrity.