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Product Detailed Parameters
- Description:OPTOISOLATOR 5KV 1CH TRANS 4-DIP
- Series:-
- Mfr:Everlight Electronics Co Ltd
- Package:Tube
- Number of Channels:1
- Voltage - Isolation:5000Vrms
- Current Transfer Ratio (Min):100% @ 5mA
- Current Transfer Ratio (Max):200% @ 5mA
- Turn On / Turn Off Time (Typ):-
- Rise / Fall Time (Typ):4µs, 3µs
- Input Type:DC
- Output Type:Transistor
- Voltage - Output (Max):80V
- Current - Output / Channel:50mA
- Voltage - Forward (Vf) (Typ):1.2V
- Current - DC Forward (If) (Max):60 mA
- Vce Saturation (Max):200mV
- Operating Temperature:-55°C ~ 110°C
- Mounting Type:Through Hole
- Package / Case:4-DIP (0.300", 7.62mm)
- Supplier Device Package:4-DIP
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Overview
The EL816(X)-V is a single-channel transistor output optocoupler manufactured by Everlight Electronics. It integrates an infrared emitting diode optically coupled to an NPN phototransistor detector. The device provides electrical isolation with a rated insulation voltage of 5000 Vrms and supports a collector-emitter breakdown voltage of at least 80 V. It operates within a temperature range of -55°C to +110°C and complies with RoHS standards.
Feature Summary
- Integrates an infrared LED with an NPN phototransistor for signal transmission
- Provides high-voltage isolation between input and output circuits
- Supports extended operating temperatures up to 110°C
- Complies with international safety certifications including UL and VDE
Applications
- Industrial control systems requiring signal isolation
- Communication equipment interface circuits
- Microcontroller input/output isolation
- Power supply feedback loops
Procurement Notes
Verify the specific suffix designation against the manufacturer datasheet to confirm package type and certification status. Confirm availability as distribution channels may list this component as discontinued or obsolete. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.
Selection Notes
Select this component when high isolation voltage and wide temperature operation are required. Verify that the NPN phototransistor output configuration matches the receiving circuit design. Check current transfer ratio specifications if precise gain characteristics are necessary for the application logic levels.
Part Context
This part belongs to the EL816 series, which consists of infrared emitting diodes coupled to phototransistor detectors. The series is available in various packages including DIP and SMD options. The EL816(X)-V variant specifically denotes a particular packaging and certification configuration within this family of optocouplers.
Replacement Considerations
Direct substitutes include other EL816 variants such as EL816(M)(Y)-V or EL816(S)(X)(TD)-FV, provided pinout and isolation ratings match. Verify mechanical dimensions and lead spacing to ensure physical compatibility during replacement.
FAQ
What is the maximum insulation voltage rating?
The device has a maximum insulation voltage rating of 5000 Vrms.
Does the component support surface mount installation?
Yes, the EL816 series includes surface mount options, though specific package types vary by suffix.
What is the minimum collector-emitter breakdown voltage?
The minimum collector-emitter breakdown voltage is specified as 80 V.
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