EM004LXQBB313IS1T

Memory IC Overview

The EM004LXQBB313IS1T is a magnetoresistive random access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a 4 Mbit storage capacity organized as 512 k x 8 bits and utilizes a Quad SPI interface with a maximum clock frequency of 133 MHz. The device operates within a supply voltage range of 1.65 V to 2 V, drawing working power currents of 124 mA and 156 mA. It is housed in a 24-BGA package suitable for surface mount technology and supports an industrial operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Spin-transfer torque MRAM technology providing non-volatile data retention without write delays.
• Quad SPI interface enabling high-speed serial communication compatible with standard flash protocols.
• Industrial-grade thermal stability supporting operation across extended temperature environments.

Memory IC Applications

• Embedded systems requiring persistent configuration storage
• Industrial control units needing rapid boot-up times
• IoT devices demanding low-power non-volatile memory

Memory IC Procurement Notes

Verify the specific suffix IS1T against official datasheets to confirm the exact temperature grade and packaging variant. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly. Ensure compatibility with the target system's voltage rails and SPI command set. Validate that the 24-BGA footprint matches the PCB design constraints.

Memory IC Selection Notes

Select this component when non-volatility and unlimited endurance are critical compared to traditional flash memory. The Quad SPI interface offers higher throughput than standard SPI variants. Consider the 24-BGA package size relative to available board space. Verify that the 1.65V to 2V supply requirement aligns with the system power architecture.

Memory IC Part Context

This part belongs to the EMxxLX series of Quad SPI MRAM devices from Everspin Technologies. The series is characterized by spin-transfer torque technology, offering SRAM-like speed with flash-like persistence. The EM004LX variant specifically provides 4 Mbit density in a compact form factor designed for space-constrained embedded applications.

Memory IC FAQ

Does the EM004LXQBB313IS1T require write voltages different from the read voltage?

No, the device operates on a single 1.65V to 2V supply voltage for both read and write operations.

What is the endurance rating of this MRAM device?

As a magnetoresistive random access memory, it offers unlimited write endurance, unlike charge-based flash memory technologies.