EM004LXQBB313IS2T

Memory IC Overview

The EM004LXQBB313IS2T is a magnetoresistive random access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 4 Mbit organized as 512 k x 8 bits. The device utilizes a Quad SPI interface and operates at a clock frequency of 133 MHz. It functions within a supply voltage range of 1.65 V to 2 V, with operating power currents specified at 124 mA and 156 mA. The component is housed in a BGA-24 package and supports surface mount installation. It is designed for industrial temperature ranges, operating between -40°C and +85°C.

Memory IC Feature Summary

• Non-volatile data retention utilizing spin-transfer torque MRAM technology
• Quad SPI interface supporting high-speed serial communication up to 133 MHz
• Low voltage operation compatible with 1.65 V to 2 V power supplies
• Industrial temperature range capability from -40°C to +85°C

Memory IC Applications

• Data logging systems requiring non-volatile storage
• Industrial control applications needing fast write endurance
• Embedded systems with limited power supply constraints

Memory IC Procurement Notes

Verify the specific suffix IS2T against official Everspin documentation to confirm exact temperature grade and packaging specifications. Confirm RoHS compliance status through current manufacturer declarations. Check availability directly with authorized distributors as stock levels fluctuate. Ensure the BGA-24 footprint matches your PCB design requirements before ordering.

Memory IC Selection Notes

Select this component when a small form factor 4 Mbit non-volatile memory is required with SPI compatibility. The EM004LX series offers unlimited write endurance compared to flash alternatives. Consider the BGA-24 package for space-constrained designs. Verify that the 1.65 V to 2 V voltage range aligns with your system's power rails.

Memory IC Part Context

This part belongs to the EMxxLX family of Quad SPI MRAM devices from Everspin Technologies. These devices are designed to replace traditional EEPROM and Flash memories in applications demanding high speed and durability. The EM004LX variant specifically provides 4 Mbit capacity in a compact BGA package, targeting embedded and industrial markets.

Memory IC FAQ

What is the organization of the EM004LXQBB313IS2T memory?

The memory is organized as 512 k words of 8 bits each.

Does this device support unlimited write cycles?

Yes, as an MRAM device, it offers unlimited write endurance without degradation over time.