EM004LXQBDH13ES1T

Memory IC Overview

The EM004LXQBDH13ES1T is a 4 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a Quad SPI interface operating at frequencies up to 133 MHz. The device provides a storage capacity of 512 k x 8 bits and functions within a supply voltage range of 1.65 V to 2 V. It is housed in an 8-DFN surface-mount package and supports an industrial operating temperature range from -40°C to +105°C.

Memory IC Feature Summary

• Non-volatile magnetoresistive memory technology ensuring data retention without power
• Quad Serial Peripheral Interface enabling high-speed data transfer via eight I/O signals
• Single 1.8V power supply operation for simplified system integration

Memory IC Applications

• Industrial control systems requiring persistent memory
• Data center infrastructure components
• Embedded systems needing non-volatile configuration storage

Memory IC Procurement Notes

Verify the specific suffix and package type against official datasheets before procurement, as variations exist within the EMxxLX family. Confirm that the 8-DFN footprint matches your PCB design constraints. Ensure compatibility with the required industrial temperature range (-40°C to +105°C) for your specific application environment. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.

Memory IC Selection Notes

Select this component when non-volatility and high endurance are critical compared to flash-based alternatives. The Quad SPI interface offers higher throughput than standard SPI variants. Consider the 8-DFN package size if board space is limited. Verify that the 1.65V to 2V operating voltage aligns with your system's power rails. This part is suitable for applications demanding frequent write cycles without wear-out concerns typical of EEPROM or Flash.

Memory IC Part Context

This device belongs to the EMxxLX series of MRAM products from Everspin Technologies. The series utilizes spin-transfer torque magnetic tunnel junction technology. These devices are designed to replace traditional volatile SRAM and non-volatile Flash memory in various embedded applications. The EM004LXQBDH13ES1T specifically represents the 4Mb density variant with Quad SPI capabilities.

Memory IC Replacement Considerations

EM004LXQBDH13ES2T is listed as a suggested alternate part number.