EM008LXOBB320CS2T

Memory IC Overview

The EM008LXOBB320CS2T is a magnetoresistive random access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features an octal SPI interface and is housed in a 24-BGA package. The device provides a storage capacity of 8 Mbit, organized as 1M x 8. It operates within a supply voltage range of 1.65 V to 2 V and supports data rates up to 200 MHz. The component is rated for industrial temperature ranges, with operation from -40°C to +85°C.

Memory IC Feature Summary

• Non-volatile magnetic storage technology providing unlimited endurance without write delays.
• Octal SPI interface enabling high-speed serial communication compatible with standard protocols.
• Low voltage operation optimized for power-efficient embedded systems.

Memory IC Applications

• Industrial control systems requiring reliable non-volatile data retention
• Automotive electronics demanding high endurance and radiation tolerance
• IoT devices needing low-power persistent memory solutions

Memory IC Procurement Notes

Verify the specific suffix 'CS2T' against official Everspin documentation to confirm tape-and-reel packaging and commercial temperature grade specifications. Ensure compatibility with existing PCB footprints for the 24-BGA package. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly to prevent damage during manufacturing processes.

Memory IC Selection Notes

Select this component when an 8 Mbit capacity is required alongside high-speed octal SPI connectivity. Compare against other EMxxLX series variants if different density or package options are needed. Verify that the 1.65V to 2V operating voltage aligns with the system's power rail constraints and that the BGA-24 footprint fits the design layout.

Memory IC Part Context

This part belongs to the Everspin EMxxLX family of Octal SPI MRAM devices. These components utilize spin-transfer torque magnetic tunnel junction technology to provide fast, durable, and non-volatile memory solutions. The family is designed to replace traditional flash and EEPROM technologies in applications requiring high write endurance and low power consumption.

Memory IC FAQ

What is the organization of the EM008LXOBB320CS2T memory array?

The memory is organized as 1M words of 8 bits each, totaling 8 Mbit capacity.

Does this MRAM require write cycles to be managed like flash memory?

No, the MRAM technology offers unlimited endurance and does not suffer from wear-out mechanisms associated with flash memory, eliminating the need for wear-leveling algorithms.