EM016LXOBB320ES2T

Memory IC Overview

The EM016LXOBB320ES2T is a 16 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features an Octal SPI interface and operates at frequencies up to 200 MHz. The device is organized as 2 M x 8 bits and utilizes a 24-BGA package for surface mount installation. Electrical specifications include a supply voltage range of 1.65 V to 2 V, with operating currents specified at 124 mA and 156 mA. The component supports an extended industrial temperature range from -40°C to +105°C.

Memory IC Feature Summary

• Non-volatile memory architecture providing instant-on capability without power loss data retention
• High-speed Octal SPI interface supporting operation up to 200 MHz
• Robust endurance characteristics suitable for frequent write-intensive applications

Memory IC Applications

• Industrial control systems requiring reliable non-volatile storage
• Automotive electronics demanding high-temperature stability
• Consumer devices needing fast boot-up times and low power consumption

Memory IC Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm package type and tape-and-reel configuration. Ensure compatibility with the target system's voltage levels and interface requirements before integration. Cross-reference the full part number with authorized distributors to confirm current availability and authenticity.

Memory IC Selection Notes

Select this component when designing systems that require high-speed non-volatile storage with significant write endurance. The 16 Mbit capacity and Octal SPI interface make it suitable for applications needing rapid data access. Consider the 24-BGA package constraints and thermal management requirements for the specified operating temperature range during PCB layout.

Memory IC Part Context

This MRAM device belongs to Everspin Technologies' portfolio of spin-transfer torque magnetic random-access memory solutions. These components are designed to bridge the gap between volatile SRAM speed and non-volatile flash density. The technology offers unlimited read/write cycles and radiation hardness, distinguishing it from traditional semiconductor memory technologies in harsh environments.