EM016LXQBB313ES2T

Memory IC Overview

The EM016LXQBB313ES2T is a 16 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a Quad SPI interface and operates within a supply voltage range of 1.65 V to 2 V. The memory organization is specified as 2 M x 8 bits. The device supports clock frequencies up to 133 MHz and is housed in a 24-ball BGA package designed for surface mount technology. It functions reliably across an industrial temperature range from -40°C to +105°C.

Memory IC Feature Summary

• Non-volatile data retention capability inherent to MRAM technology
• High-speed serial communication via Quad SPI interface
• Industrial-grade thermal stability for extended operating environments

Memory IC Applications

• Embedded systems requiring persistent storage with high endurance
• Industrial control units needing reliable data logging
• Automotive electronics demanding robust non-volatile memory solutions

Memory IC Procurement Notes

Verify the specific suffix codes against official datasheets to confirm pinout and electrical characteristics match system requirements. Ensure compatibility with the required 1.65 V to 2 V power domain. Confirm that the BGA-24 footprint aligns with PCB layout constraints. Check humidity sensitivity levels for proper handling and storage protocols during assembly.

Memory IC Selection Notes

Select this component when non-volatility, unlimited write endurance, and fast random access are critical. Compare against Flash or EEPROM alternatives where high cycle life and low latency are prioritized over cost. Ensure the design accommodates the specific 24-BGA package dimensions and the Quad SPI interface timing requirements for optimal performance at 133 MHz.

Memory IC Part Context

This part belongs to the Everspin Technologies EM series of MRAM devices. It utilizes spin-transfer torque magnetic tunnel junction technology to provide non-volatile storage. The series is designed to bridge the gap between volatile SRAM speed and non-volatile Flash density, offering byte-level accessibility without the wear-out mechanisms typical of charge-based memory technologies.