EM016LXQBDH13IS2R

Memory IC Overview

The EM016LXQBDH13IS2R is a magnetoresistive random-access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 16 Mbit organized as 2 M x 8 bits. The device utilizes a Quad SPI interface and operates at frequencies up to 133 MHz. It is housed in an 8-DFN package designed for surface mount technology. The component supports a supply voltage range from 1.65 V to 2 V. Operating temperatures are specified between -40°C and +85°C. Current consumption parameters are documented at 124 mA and 156 mA under specific conditions.

Memory IC Feature Summary

• Non-volatile data retention capability inherent to MRAM technology
• High-speed serial communication via Quad SPI interface
• Low voltage operation suitable for portable applications

Memory IC Applications

• Industrial control systems requiring persistent memory
• Automotive electronics with extended temperature requirements
• Consumer devices needing fast boot-up times

Memory IC Procurement Notes

Verify the suffix IS2R against official datasheets to confirm reel packaging specifications. Ensure compatibility with existing board layouts for the 8-DFN footprint. Confirm RoHS compliance status through manufacturer documentation prior to integration.

Memory IC Selection Notes

Select this part when non-volatility and high write endurance are critical. The Quad SPI interface offers speed advantages over standard SPI variants. Verify that the 1.65V to 2V supply range aligns with system power rails. Consider thermal management within the -40°C to +85°C operational window.

Memory IC Part Context

This component belongs to the Everspin MRAM family, which replaces traditional flash memory in many applications. It provides byte-level access without erase cycles. The 16 Mbit density balances capacity and performance for embedded systems. The DFN package minimizes board space usage.

Memory IC Replacement Considerations

EM016LXQBDH13IS1T is listed as a suggested alternate variant.