EM016LXQBDH13IS2T

Memory IC Overview

The EM016LXQBDH13IS2T is a Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 16 Mbit organized as 2 M x 8 bits. The device utilizes a Quad SPI interface operating at frequencies up to 133 MHz. It is housed in an 8-DFN package and supports a supply voltage range from 1.65 V to 2 V. The component is designed for industrial temperature ranges, with operation supported between -40°C and +85°C.

Memory IC Feature Summary

• Non-volatile memory technology providing unlimited read/write endurance without write delays.
• Quad Serial Peripheral Interface (SPI) compatibility for high-speed data transfer.
• Low voltage operation within the 1.65 V to 2 V range for power efficiency.

Memory IC Applications

• Industrial control systems requiring persistent data storage
• Automotive electronics needing high endurance memory
• IoT devices utilizing low-power non-volatile storage

Memory IC Procurement Notes

Verify the specific suffix 'S2' against official datasheets to confirm package and temperature grade variations. Ensure compatibility with 1.65V to 2V logic levels. Confirm RoHS compliance status through manufacturer documentation before integration into regulated assemblies.

Memory IC Selection Notes

Select this part for applications demanding high endurance and non-volatility over traditional flash. Compare the 133 MHz Quad SPI speed against Octal SPI alternatives like the EM016LXOAB320 series if higher throughput is required. Verify the 8-DFN footprint fits the PCB layout constraints compared to BGA options.

Memory IC Part Context

This component belongs to the EMxxLX family of MRAM devices from Everspin Technologies. These devices are characterized by high performance, multiple I/O options, and SPI compatibility. The EM016LX series specifically targets applications needing robust, fast, and durable memory solutions in compact packages.

Memory IC Replacement Considerations

EM016LXQBDH13IS1T is listed as a suggested alternate part number. Verify pinout and electrical specifications against the datasheet to ensure functional equivalence before substitution.

Memory IC FAQ

What is the organization of the EM016LXQBDH13IS2T memory?

The memory is organized as 2 M x 8 bits, totaling 16 Mbit capacity.

Does this device support write operations without delay?

Yes, MRAM technology allows for immediate write completion without the erase-before-write cycles required by flash memory.