EM032LXOAB320CS2R

Memory IC Overview

The EM032LXOAB320CS2R is a Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 32 Mbit organized as 4 M x 8. The device utilizes an Octal SPI interface and operates at frequencies up to 200 MHz. It is housed in a BGA-24 package with surface mount installation style. Electrical specifications include a minimum supply voltage of 1.65 V and a maximum of 2 V. Operating currents are specified at 124 mA and 156 mA. The component supports an industrial temperature range from 0°C to +70°C.

Memory IC Feature Summary

• Non-volatile memory technology providing data retention without power
• Octal SPI interface supporting high-speed data transfer rates
• Industrial-grade operational temperature capability

Memory IC Applications

• Embedded systems requiring non-volatile data storage
• Industrial control applications
• Automotive electronics modules

Memory IC Procurement Notes

Verify the specific suffix CS2R against official datasheets to confirm reel packaging and commercial temperature grade. Ensure compatibility with existing board layouts for the BGA-24 footprint. Confirm moisture sensitivity handling requirements prior to assembly. Cross-reference part numbers with manufacturer documentation to avoid substitution errors.

Memory IC Selection Notes

Select this component when Octal SPI connectivity and 32 Mbit capacity are required within a compact BGA-24 form factor. Consider the 1.65 V to 2 V operating voltage range for power budgeting. Evaluate the 0°C to +70°C temperature range against environmental conditions. Compare performance metrics with other MRAM variants if higher density or extended temperature ranges are necessary.

Memory IC Part Context

This part belongs to the EMxxLX series of MRAM devices from Everspin Technologies. These components are designed for high-performance applications requiring multiple I/O options and SPI compatibility. The series emphasizes low voltage operation and robust data retention characteristics suitable for modern embedded memory needs.