EM032LXOAB320CS2T

Memory IC Overview

The EM032LXOAB320CS2T is a magnetoresistive random-access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 32 Mbit organized as 4 M x 8 bits. The device utilizes an Octal SPI interface and operates at frequencies up to 200 MHz. It is housed in a 24-ball BGA package designed for surface-mount technology. The component supports a supply voltage range from 1.65 V to 2 V and functions within an industrial temperature range of -40°C to +105°C.

Memory IC Feature Summary

• Non-volatile data retention without requiring power for storage maintenance
• High-speed serial communication via Octal SPI interface supporting 200 MHz operation
• Industrial-grade thermal stability suitable for demanding environmental conditions

Memory IC Applications

• Embedded systems requiring persistent configuration storage
• Industrial control units needing reliable non-volatile memory
• Automotive electronics applications with strict temperature requirements

Memory IC Procurement Notes

Verify the specific suffix 'CS2T' against official manufacturer documentation to confirm exact operational parameters, as variations may exist within the product family. Ensure compatibility with the required 1.65V to 2V supply rails and 24-BGA footprint during integration planning. Cross-reference datasheet specifications for humidity sensitivity handling procedures prior to assembly.

Memory IC Selection Notes

Select this component when high endurance and fast write speeds are prioritized over density. The Octal SPI interface offers significant bandwidth advantages compared to standard SPI variants. Consider the 24-BGA package constraints and the specific 1.65V to 2V voltage requirement during PCB design and power budgeting.

Memory IC Part Context

This part belongs to the Everspin EMxxLX series of MRAM devices. These components are engineered to provide high-performance, multiple I/O capabilities while maintaining SPI compatibility. The series targets applications requiring robust non-volatile memory solutions with extended endurance characteristics compared to traditional flash technologies.