EM032LXQADG13ES1R

Memory IC Overview

The EM032LXQADG13ES1R is a 32 Mbit Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It features a Quad SPI interface operating at 133 MHz and is organized as 4 M x 8. The component operates within a supply voltage range of 1.65 V to 2 V, with working power currents specified at 124 mA and 156 mA. It is housed in an 8-DFN surface-mount package and supports an industrial temperature range from -40 °C to +105 °C.

Memory IC Feature Summary

• Non-volatile data retention without requiring power for storage
• Quad I/O xSPI interface supporting high-speed 133 MHz operation
• Compatible read/write timing with serial EEPROM and flash devices

Memory IC Applications

• Industrial embedded systems requiring non-vatile storage
• Automotive electronics demanding wide temperature tolerance
• Transportation infrastructure control units

Memory IC Procurement Notes

Verify the specific suffix 'ES1R' against official Everspin documentation to confirm the extended temperature grade (-40°C to +105°C) and reel packaging format. Ensure compatibility with existing board designs regarding the 8-DFN footprint and 1.65V to 2V power requirements before finalizing procurement orders.

Memory IC Selection Notes

Select this part when non-volatility and high endurance are required alongside standard SPI compatibility. The EM032LX series offers unlimited write cycles compared to traditional flash. Consider the 8-DFN package size constraints and the specific 133 MHz clock speed requirements of the host system during integration planning.

Memory IC Part Context

This component belongs to the EMxxLX series of MRAM devices from Everspin Technologies. These devices utilize spin-transfer torque technology to provide SRAM-like performance with non-volatile characteristics. The series is designed for applications needing high reliability and fast access times in compact packages.

Memory IC Replacement Considerations

Official suggested alternates include EM032LXQADG13ES2T. Verify pinout and electrical specifications against datasheets before substitution.

Memory IC FAQ

What is the memory organization of the EM032LXQADG13ES1R?

The device is organized as 4 M x 8.

Does this MRAM require write delays like flash memory?

No, it features serial EEPROM and serial flash compatible read/write timing with no write delays.