EM064LXOAB320CS1T

Memory IC Overview

The EM064LXOAB320CS1T is a magnetoresistive random access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 64 Mbit organized as 8 M x 8 bits. The device utilizes an Octal SPI interface and operates at a clock frequency of 200 MHz. It is housed in a 24-BGA package designed for surface mount technology. The component functions within a supply voltage range of 1.65 V to 2 V, with operating power currents specified at 124 mA and 156 mA. The industrial temperature range extends from 0°C to +70°C.

Memory IC Feature Summary

• Non-volatile data retention utilizing spin-transfer torque MRAM technology
• High-speed Octal SPI interface supporting 200 MHz operation
• Unlimited write endurance characteristics inherent to MRAM architecture

Memory IC Applications

• Industrial control systems requiring high endurance memory
• Automotive electronics applications
• Consumer devices needing fast non-volatile storage

Memory IC Procurement Notes

Verify the specific suffix CS1T against official datasheets to confirm package type and temperature grade. Confirm availability status directly with authorized distributors as stock levels fluctuate. Ensure compatibility with 1.65V to 2V power domains during system design validation.

Memory IC Selection Notes

Select this component when high-speed serial access and unlimited write cycles are required. Compare against other EMxxLX series variants based on capacity needs. Verify that the 24-BGA footprint fits the target PCB layout constraints.

Memory IC Part Context

This part belongs to the EMxxLX series of Octal SPI MRAM devices from Everspin Technologies. These components bridge the performance gap between volatile SRAM and traditional non-volatile memories like Flash. The series emphasizes low latency and high durability for embedded applications.

Memory IC Replacement Considerations

Consult official substitution guides for compatible parts within the EMxxLX family. Verify pinout and electrical specifications before replacing with similar MRAM devices.