EM064LXOAB320ES1R

Memory IC Overview

The EM064LXOAB320ES1R is a 64 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features an Octal SPI interface and operates within a supply voltage range of 1.65 V to 2 V. The device is organized as 8 M x 8 bits and supports clock frequencies up to 200 MHz. It is housed in a 24-ball BGA package designed for surface mount technology. The component functions reliably across an industrial temperature range from -40°C to +105°C, with specified operating power currents of 124 mA and 156 mA.

Memory IC Feature Summary

• Non-volatile data retention utilizing magnetoresistive random access memory technology
• High-speed serial communication via Octal SPI interface supporting 200 MHz operation
• Industrial-grade thermal stability suitable for extended environmental conditions

Memory IC Applications

• Embedded systems requiring persistent storage with high endurance
• Industrial control units needing reliable non-volatile configuration memory
• Automotive electronics demanding robustness against temperature variations

Memory IC Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing board layouts regarding the 24-BGA footprint and pinout definitions. Cross-reference electrical parameters such as voltage limits and current consumption with system power constraints before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when designing systems that require high-speed non-volatile memory with significant write endurance capabilities. Consider the 64 Mbit capacity and 8-bit organization for applications needing substantial data persistence without the latency associated with traditional flash technologies. Evaluate the 24-BGA package constraints and ensure adequate thermal management for the specified operating temperature range.

Memory IC Part Context

This part belongs to the EMxxLX series of MRAM devices from Everspin Technologies. It shares architectural similarities with other models in the family, differing primarily in storage density and specific packaging configurations. The series is characterized by its use of spin-transfer torque magnetic tunnel junctions for data storage, offering fast read/write speeds comparable to SRAM while maintaining non-volatility.

Memory IC Replacement Considerations

EM064LXOAB320ES2T is listed as a suggested alternate part number.