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EM064LXOAB320ES2R is listed in the Memory IC range at ChipApex. The manufacturer field lists Everspin Technologies Inc.. Its product description is IC RAM 64MBIT XSPI 24TBGA. Review the specifications below when checking this part for your BOM.
The EM064LXOAB320ES2R is a 64 Mbit Magnetoresistive Random Access Memory (MRAM) device manufactured by Everspin Technologies. It features an Octal SPI interface and operates at frequencies up to 200 MHz. The memory is organized as 8 Meg words by 8 bits. It functions within a supply voltage range of 1.65 V to 2 V. The component is housed in a 24-ball BGA package designed for surface mount technology. Industrial temperature ratings support operation from -40°C to +105°C.
Verify the specific suffix 'ES2R' against official Everspin documentation to confirm package type and temperature grade alignment. Ensure compatibility with existing PCB footprints for the 24-BGA form factor. Cross-reference electrical specifications with system power rails to validate the 1.65V to 2V operating window. Confirm availability status through authorized distributors as supply constraints may exist.
Select this component when non-volatility, high endurance, and fast write speeds are critical compared to traditional flash memory. The Octal SPI interface offers higher bandwidth than standard Quad SPI variants. Consider the 24-BGA package size constraints during mechanical design. Verify that the industrial temperature range meets the environmental requirements of the target application environment.
This part belongs to the EMxxLX series of MRAM devices from Everspin Technologies. The series emphasizes high-performance multiple I/O capabilities combined with SPI compatibility. These devices are engineered to replace EEPROM and Flash in applications demanding faster write cycles and greater durability. The EM064LX variant specifically targets 64 Mbit capacity needs within the broader family portfolio.
The device supports clock frequencies up to 200 MHz.
No, the device does not experience write delays inherent to flash memory, allowing direct byte-level writes without prior erase cycles.
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