EM064LXQAB313IS2R

Memory IC Overview

The EM064LXQAB313IS2R is a 64 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a Quad SPI interface and operates within a supply voltage range of 1.65 V to 2 V. The device is organized as 8 M x 8 bits and supports clock frequencies up to 133 MHz. It is housed in a 24-BGA package designed for surface mount technology (SMD/SMT). The component functions reliably across an industrial temperature range from 0°C to +70°C.

Memory IC Feature Summary

• Non-volatile data retention utilizing magnetoresistive memory technology
• High-speed Quad Serial Peripheral Interface (SPI) communication
• Low voltage operation compatible with 1.65 V to 2 V power supplies

Memory IC Applications

• Industrial control systems requiring persistent storage
• Automotive electronics demanding high reliability
• Consumer devices needing fast boot-up times
• IoT sensors with limited power budgets

Memory IC Procurement Notes

Verify the specific suffix 'IS2R' against official Everspin documentation to confirm exact temperature grade and packaging configuration. Ensure compatibility with existing board layouts regarding the 24-BGA footprint and pinout definitions. Cross-reference the datasheet for any recent revisions that may affect electrical characteristics or mechanical dimensions before finalizing procurement orders.

Memory IC Selection Notes

Select this component when non-volatility, high endurance, and low power consumption are critical requirements. The Quad SPI interface offers higher throughput compared to standard SPI variants while maintaining simple wiring. Consider the 24-BGA package size constraints and thermal management needs associated with SMD/SMT installation methods during the design phase.

Memory IC Part Context

This part belongs to the EMxxLX series of MRAM devices from Everspin Technologies. These components are designed to replace traditional flash memory solutions in applications where write speed, endurance, and power efficiency are paramount. The series integrates magnetic tunnel junction cells to provide robust data storage capabilities across various industrial and commercial environments.