EM064LXQADG13CS2R

Memory IC Overview

The EM064LXQADG13CS2R is a 64 Mbit Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features an 8 M x 8 organization and utilizes a Quad SPI interface operating at frequencies up to 133 MHz. The device is housed in an 8-DFN package with surface mount installation. It operates within a supply voltage range of 1.65 V to 2 V and supports an industrial temperature range from 0°C to +70°C.

Memory IC Feature Summary

• Non-volatile memory technology providing instant-on capability without power loss retention
• Quad SPI interface supporting high-speed data transfer operations
• Compact 8-DFN surface mount package design for space-constrained applications

Memory IC Applications

• Industrial control systems requiring reliable non-volatile storage
• Consumer electronics needing fast boot-up times
• Automotive embedded systems with moderate temperature requirements

Memory IC Procurement Notes

Verify the specific suffix CS2R against official Everspin documentation to confirm exact packaging and environmental compliance details. Ensure compatibility with 1.65V to 2V supply rails during system design. Confirm availability status through authorized distributors as stock levels fluctuate. Validate RoHS compliance requirements for your target market before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a small form factor MRAM solution is required with Quad SPI connectivity. Consider the 8-DFN package constraints and 133 MHz interface speed for performance matching. Evaluate the 0°C to +70°C operating range against your environmental conditions. Compare power consumption specifications if battery life is a critical design parameter.

Memory IC Part Context

This part belongs to the Everspin EMxxLX series of MRAM devices, designed to replace traditional flash or EEPROM technologies where endurance and speed are prioritized. The Quad SPI variant offers higher throughput compared to standard SPI versions while maintaining low power consumption characteristics typical of spin-transfer torque MRAM architectures.