EM064LXQADG13ES1R

Memory IC Overview

The EM064LXQADG13ES1R is a Magnetoresistive Random Access Memory (MRAM) integrated circuit manufactured by Everspin Technologies. It provides a storage capacity of 64 Mbit organized as 8 M x 8. The device utilizes a Quad SPI interface and supports clock frequencies up to 200 MHz. It operates within a supply voltage range of 1.65 V to 2 V. The component is housed in an 8-DFN package with dimensions of 6x8 mm, designed for surface mount technology applications.

Memory IC Feature Summary

• Provides persistent non-volatile memory retaining data without power
• Supports high-speed data transfer via Quad I/O interface
• Operates on a single low-voltage power supply

Memory IC Applications

• Industrial embedded systems requiring persistent storage
• Automotive electronics meeting AEC-Q100 standards
• Transportation control units needing fast write endurance

Memory IC Procurement Notes

Verify the specific suffix ES1R against official Everspin documentation to confirm the exact tape and reel packaging configuration. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity. Confirm that the required operating temperature range aligns with the industrial or automotive grade specifications listed in the datasheet before finalizing orders.

Memory IC Selection Notes

Select this component when application requirements demand high-speed serial access combined with non-volatile data retention. The 200 MHz interface speed suits designs needing rapid read/write cycles. Consider the 8-DFN footprint for compact PCB layouts. Validate that the 1.65 V to 2 V supply voltage matches the system power rails and that the thermal characteristics fit the enclosure constraints.

Memory IC Part Context

This part belongs to the EMxxLX series of STT-MRAM devices from Everspin Technologies. These components are engineered for high-performance embedded applications where traditional flash memory limitations regarding endurance and speed are critical. The series integrates spin-transfer torque technology to deliver robust data persistence across varying environmental conditions.

Memory IC Replacement Considerations

Cross-reference with EM064LXQADG13CS1R for similar capacity but different speed grades. Verify pin compatibility and electrical parameters against EM064LXQADG13HS2T if automotive qualification is required. Consult official substitution guides for any functional differences in interface timing or voltage thresholds.