EM128LXOAB320CS2R

Memory IC Overview

The EM128LXOAB320CS2R is a magnetoresistive random access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 128 Mbit organized as 16 M x 8 bits. The device utilizes an Octal SPI interface and operates at frequencies up to 200 MHz. It is housed in a BGA-24 package designed for surface mount technology. The component supports a supply voltage range from 1.65 V to 2 V, with operating currents specified at 125 mA and 157 mA. It functions within a temperature range of -40°C to +105°C.

Memory IC Feature Summary

• Non-volatile data retention utilizing spin-transfer torque MRAM technology
• High-speed Octal SPI interface supporting 200 MHz operation
• Wide industrial operating temperature range capability

Memory IC Applications

• Industrial control systems requiring persistent memory
• Automotive electronics applications
• Embedded systems needing high endurance storage

Memory IC Procurement Notes

Verify the specific suffix 'CS2R' against official Everspin documentation to confirm environmental rating and packaging configuration. Ensure compatibility with the required voltage domain between 1.65 V and 2 V. Confirm that the BGA-24 footprint matches the target PCB design constraints. Validate that the Octal SPI protocol aligns with the host controller capabilities.

Memory IC Selection Notes

Select this component when non-volatility and high write endurance are critical requirements. The Octal SPI interface offers higher bandwidth compared to standard SPI variants. Consider the thermal performance characteristics given the wide operating temperature range. Evaluate the power consumption profiles at 125 mA and 157 mA against system budget constraints.

Memory IC Part Context

This part belongs to the EMxxLX series of MRAM devices from Everspin Technologies. These devices are designed to replace traditional flash and EEPROM technologies in applications demanding faster write speeds and greater durability. The series emphasizes low voltage operation and robust data retention without the latency penalties associated with conventional non-volatile memories.