EM128LXOAB320IS2R

Memory IC Overview

The EM128LXOAB320IS2R is a magnetoresistive random access memory (MRAM) integrated circuit manufactured by Everspin Technologies. It features a storage capacity of 128 Mbit organized as 16 M x 8 bits. The device utilizes an Octal SPI interface and operates at clock frequencies up to 200 MHz. It functions within a supply voltage range of 1.65 V to 2 V, with typical operating currents specified at 125 mA and 157 mA. The component is housed in a BGA-24 package designed for surface mount technology (SMD/SMT). It supports an industrial temperature range from -40°C to +85°C and includes humidity sensitivity classification.

Memory IC Feature Summary

• Non-volatile data retention utilizing spin-transfer torque MRAM technology
• High-speed serial communication via Octal SPI interface supporting 200 MHz operation
• Low voltage operation compatible with 1.65 V to 2 V power supplies
• Industrial grade thermal stability suitable for wide ambient temperature environments

Memory IC Applications

• Embedded systems requiring non-volatile code storage
• Industrial control units needing fast boot-up times
• Automotive electronics demanding high endurance memory
• IoT devices requiring low-power persistent data retention

Memory IC Procurement Notes

Verify the specific suffix 'IS2R' against official Everspin documentation to confirm the exact packaging format and temperature grade. Ensure compatibility with existing PCB footprints for the BGA-24 package. Confirm that the Octal SPI interface signals align with the host controller's capabilities. Validate that the 1.65 V to 2 V supply rails meet the system's power budget requirements under maximum load conditions.

Memory IC Selection Notes

Select this component when high-density non-volatile storage is required alongside rapid read access speeds. The Octal SPI interface offers higher bandwidth compared to standard Quad SPI variants. Consider the BGA-24 form factor for space-constrained designs. Evaluate the 128 Mbit capacity against application data logging or firmware storage needs. Ensure the manufacturing process supports the required soldering profiles for fine-pitch BGA assemblies.

Memory IC Part Context

This part belongs to the Everspin EMxxLX series of MRAM devices, which are designed to replace traditional flash and EEPROM technologies in applications requiring high write endurance and low latency. The series integrates magnetic tunnel junction cells with standard CMOS logic to provide reliable data storage without the wear-out mechanisms associated with charge-based memory technologies.